Fabrication of Si Micropore and Graphene Nanohole Structures by Focused Ion Beam
نویسندگان
چکیده
منابع مشابه
Fabrication of GaN nanorods by focused ion beam
Text IIINitride nanocolumns (III-N NCs) are the subject of intense research since the past decade because of their unique properties and potential electronic and optoelectronic applications. NCs are usually grown on Si(111), Si (100), SiC, and sapphire substrates by a self-assembly process using plasma-assisted molecular beam epitaxy [1-3]. Unlike continuous layers, NCs accommodate the lattice-...
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The capabilities of a focused ion beam (FIB) to directly remove or deposit material with accuracies of a few nanometers and the ability to observe these patterning processes live with a scanning electron microscope (SEM) in DualBeamTM instruments are attracting an increasing number of nanoprototyping applications across a wide range of use cases. The majority of applications to date have aimed ...
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The fabrication of ultramicroelectrodes (UMEs) for analytical electrochemical applications has been explored, using boron-doped diamond as the active electrode material in an insulating coating formed by deposition of electrophoretic paint. Because of the rough nature of the diamond film, the property of such coatings that is normally exploited in the fabrication of UMEs, namely the tendency to...
متن کاملFocused Ion Beam Fabrication of Individual Carbon Nanotube Devices
Focused ion beam (FIB) techniques have found many applications in nanoscience and nanotechnology applications in recent years. However, not much work has been done using FIB to fabricate carbon nanotube devices. This is mainly due to the fact that carbon nanotubes are very fragile and energetic ion beam from FIB can easily damage the carbon nanotubes. Here we report the fabrication of carbon na...
متن کاملFabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition
In this work we have demonstrated nanoscale GaN device structures made from individual GaN nanowires and electrical contacts utilizing focused ion beam FIB induced Pt deposition. These GaN nanowires were grown by direct reaction of Ga vapor with NH3 and had diameters ranging from 100 nm to 250 nm and lengths up to 200 m. As-grown nanowires were dispersed on SiO2 coated p++ Si substrate. A 30 ke...
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ژورنال
عنوان ژورنال: Sensors
سال: 2020
ISSN: 1424-8220
DOI: 10.3390/s20061572